• 16: Vertical-transport transistors with self-aligned contacts, US10230000, Mar 12, 2019 |PDF|Emilie Bourjot, Daniel Chanemougame, Rinus Tek Po Lee, Xie Ruilong, Hui Zang.

  • 15: Microwave annealing of flowable oxides with trap layer, US10211045, Feb 19, 2019 |PDF| Rishikesh Krishnan, Joseph K. Kassim, Bharat V. Krishnan, Joseph F. Shepard, Rinus Tek Po Lee, Yiheng Xu.

  • 14: Methods, apparatus and system for vertical FinFET device with reduced parasitic capacitance, US10204904, Feb 12, 2019 |PDF| Zang Hui, Rinus Tek Po Lee.

  • 13: Integrated circuit products that include FinFET devices and a protection layer formed on an isolation region, US10170544, Jan 1, 2019 |PDF|Xie Ruilong, Christopher Prindle, Ming Gyu Sung, Rinus Tek Po Lee.

  • 12: FinFETs with strained channels and reduced on state resistance, US10134876B2, Nov 20, 2018 |PDF| Bharat Krishnan, Timothy McArdle, Rinus Tek Po Lee, Shishir Ray, Akshey Sehgal.

  • 11: Memory array with buried bitlines below vertical field effect transistors of memory cells and a method of forming the memory array, US10134739B1, Nov 20, 2018 |PDF| Zang Hui, Jerome Ciavatti, Rinus Tek Po Lee.

  • 10: Semiconductor structure including two-dimensional and three-dimensional bonding materials, US10121706, Nov 6, 2018 |PDF| Rinus T.P. Lee, Bharat Krishnan, Zang Hui, Matthew Stoker.

  • 09: Buried contact structures for a vertical field-effect transistor, US10109714B2 Oct 23, 2018 |PDF| Zang Hui, Rinus Tek Po Lee.

  • 08: Nanosheet FET with full dielectric isolation, US10103238B1, Oct 16, 2018 |PDF| Zang Hui, Rinus Tek Po Lee, Haigou Huang, Chanro Park, Ming Gyu Sung, Xie Ruilong.

  • 07: Methods of forming a protection layer on an isolation region of IC products comprising FinFET devices, US9876077B1, Jan 23, 2018 |PDF| Xie Ruilong, Christopher Prindle, Ming Gyu Sung, Rinus Tek Po Lee.

  • 06: Buried contact structures for a vertical field-effect transistor, US9831317B1, Nov. 28, 2017 |PDF| Hui Zang, Tek Po Rinus Lee.

  • 05: Common metal contact regions having different Schottky barrier heights and methods of manufacturing same, US9812543B2, Nov 07, 2017|PDF| Rinus Tek Po Lee, Jinping Liu, Ruilong Xie.

  • 04: Forming symmetrical stress liners for strained CMOS vertical nanowire field-effect transistors, US9570552B1, Feb, 14, 2017 |PDF| Rinus Tek Po Lee, Jinping Liu.

  • 03: Metal alloy with an abrupt interface to III-V semiconductor, US8829567B2, Sept 9, 2014 |PDF| Rinus Tek Po Lee, Tae Woo Kim, Man Hoi Wong, Richard Hill.

  • 02: Silicide formed from ternary metal alloy films, US7335606B2, Feb 26, 2008 |PDF| Dongzhi Chi, Tek Po Rinus, Soo Jin Chua.

  • 01: Forming an electrical contact on an electronic component, US7015132B2, Mar 06, 2006 |PDF| Syamal Kumar Lahiri, Rinus Tek Po Lee, Zuruzi Bin Abu Samah.



  • 06: Methods of forming spacers adjacent gate structures of a transistor device, 16/038,384, Jul 18, 2018. Hui Zang, Chung Foong Tan, Guowei Xu, Haitaing Wang, Yue Zhong, Ruilong Xie, Rinus Tek Po Lee and Scott Beasor

  • 05: Xie Ruilong, Katsunori Onishi, Rinus Tek Po Lee, “Method for forming a protection device having an inner contact spacer and resulting devices,” 15/455,313, March 10, 2017

  • 04: Rinus Tek Po Lee, Bharat V. Krishnan, Jinping Liu, Hui Zang, Judson Robert Holt, “Formation of band-edge contacts,” 15/352,963, November 16, 2016

  • 03: Rinus Lee, Wei-Yip Loh, Robert Tieckelmann, “N-type III-V semiconductor structures having ultra-shallow junctions and methods of forming same, ” US20150333128A1,  Nov 19, 2015

  • 02: Robert TIECKELMANN Wei-Yip Loh Rinus Tek Po Lee, “Phosphorus and arsenic doping of semiconductor materials,” US20150111372A1, April 23, 2015

  • 01: Dongzhi Chi, Ka Lee, Tek Po Lee, Siao Liew, Hai Yao, “Reliable Contacts,” US20070272955A1, Nov 29, 2007