Journal Publications


  • 48: Investigation of the thermal stability of Mo-In0. 45Ga0. 47As for applications as source/drain contacts
    Journal of Applied Physics 120 (13), p. 135303, 2016
    Lee A. Walsh, Conan Weiland, Anthony P. McCoy, Joseph C. Woicik, Rinus T.P. Lee, Pat Lysaght, Greg Hughes


  • 47: Heavily tellurium doped n-type InGaAs grown by MOCVD on 300mm Si wafers
    Journal of Crystal Growth 426, pp. 243-247, 2015
    Tommaso Orzali, Alexey Vert, Rinus T.P. Lee, Aras Norvilas, Gensheng Huang, Joshua L Herman, Richard J.W. Hill, Satyavolu S. Papa Rao


  • 46: Ni-(In, Ga) As alloy formation investigated by hard-X-ray photoelectron spectroscopy and X-ray absorption spectroscopy
    Physical Review Applied 2 (6), p. 064010, 2014
    Lee A Walsh, Greg Hughes, Conan Weiland, Joseph C Woicik, Rinus TP Lee, Wei-Yip Loh, Pat Lysaght, Chris Hobbs


  • 45: Very low resistance alloyed Ni-based ohmic contacts to InP-capped and uncapped n+-In0. 53Ga0. 47As
    Journal of Applied Physics 116 (16), p. 164506, 2014
    M. Abraham, S.Y. Yu, W.H. Choi, R.T.P. Lee, S.E. Mohney


  • 44: Challenges of contact module integration for GaN-based devices in a Si-CMOS environment
    Journal of Vacuum Science & Technology B 32 (3) p.030606, 2014
    Derek W. Johnson, Pradhyumna Ravikirthi, Jae Woo Suh, Rinus T.P. Lee, Richard J.W. Hill, Man Hoi Wong, Edwin L. Piner, Harlan Rusty Harris


  • 43: (Invited Review) Positive bias instability and recovery in InGaAs channel nMOSFETs
    IEEE Transactions on Device and Materials Reliability 13 (4), pp. 507-514, 2013
    S. Deora, G. Bersuker, W-Y Loh, D. Veksler, K. Matthews, T.W. Kim, R.T.P. Lee, R.J.W. Hill, D-H Kim, W-E Wang, C Hobbs, P.D. Kirsch


  • 42: Threshold voltage shift due to charge trapping in dielectric-gated AlGaN/GaN high electron mobility transistors examined in Au-free technology
    IEEE Transactions on Electron Devices 60 (10), pp. 3197-3203, 2013
    Derek W. Johnson, Rinus T.P. Lee, Richard J.W. Hill, Man Hoi Wong, Gennadi Bersuker, Edwin L. Piner, Paul D. Kirsch, H. Rusty Harris


  • 41: Contact resistance reduction technology using aluminum implant and segregation for strained p-FinFETs with silicon–germanium source/drain
    IEEE Transactions on Electron Devices 57 (6), pp. 1279-1286, 2010
    M. Sinha, R.T.P Lee, E.F. Chor, Y.C. Yeo


  • 40: M. Sinha, R.T.P. Lee, E.F. Chor, Y.C. Yeo, “Schottky barrier height modulation of Nickel–dysprosium-alloy germanosilicide contacts for strained P-FinFETs,” IEEE Electron Device Letters 30 (12), pp. 1278-1280, 2009

  • 39: R.T.P. Lee, A.T.Y. Koh, K.M. Tan, T.Y. Liow, D.Z. Chi, Y.C. Yeo, “The Role of Carbon and Dysprosium in Ni[Dy]Si:C Contacts for Schottky-Barrier Height Reduction and Application in N-Channel MOSFETs With Si:C Source/Drain Stressors,” IEEE Transactions on Electron Devices 56 (11), pp. 2770-2777, 2009

  • 38: Shao Ming Koh, Wei-Jing Zhou, Rinus T.P. Lee, Mantavya Sinha, Chee-Mang Ng, Zhiyong Zhao, Helen Maynard, Naushad Variam, Yuri Erokhin, Ganesh Samudra, Yee-Chia Yeo, “Silicon: Carbon source/drain stressors: Integration of a novel nickel aluminide-silicide and post-solid-phase-epitaxy anneal for reduced Schottky-barrier and leakage,” ECS Transactions 25 (7), pp. 211-216, 2009

  • 37: P.S.Y. Lim, R.T.P. Lee, M. Sinha, D.Z. Chi, Y.C. Yeo, “Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films,” Journal of Applied Physics 106 (4), p. 043703, 2009

  • 36: R.T.P. Lee, D.Z. Chi, Y.C. Yeo, “Platinum Germanosilicide as Source/Drain Contacts in P-Channel Fin Field-Effect Transistors (FinFETs),” IEEE Transactions on Electron Devices 56 (7), pp. 1458-1465, 2009

  • 35: K.M. Tan, M. Yang, T.Y. Liow, R.T.P. Lee, Y.C. Yeo, “Ultra high-stress liner comprising diamond-like carbon for performance enhancement of p-channel multiple-gate transistors,” IEEE Transactions on Electron Devices 56 (6), pp. 1277-1283, 2009

  • 34: M Sinha, RTP Lee, SN Devi, GQ Lo, EF Chor, YC Yeo, “Integration of Al segregated NiSiGe/SiGe source/drain contact technology in p-FinFETs for drive current enhancement,” ECS Transactions 19 (1), pp. 323-330, 2009

  • 33: R.T.P. Lee, A.E.J. Lim, K.M. Tan, T.Y. Liow, D.Z. Chi, Y.C. Yeo, “Sulfur-induced PtSi: C/Si: C Schottky barrier height lowering for realizing n-channel FinFETs with reduced external resistance,” IEEE Electron Device Letters 30 (5), pp. 472-474, 2009

  • 32: M. Sinha, R.T.P. Lee, A. Lohani, S. Mhaisalkar, E.F. Chor, Y.C. Yeo, “Achieving sub-0.1 eV hole Schottky barrier height for NiSiGe on SiGe by aluminum segregation,” Journal of The Electrochemical Society 156 (4), pp. H233-H238, 2009

  • 31: K.M. Tan, M. Yang, W.W. Fang, A.E.J. Lim, R.T.P. Lee, T.Y. Liow, Y.C. Yeo, “Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon–germanium source and drain,” IEEE Electron Device Letters 30 (3), pp. 250-253, 2009

  • 30: M. Sinha, R.T.P. Lee, K.M. Tan, G.Q. Lo, E.F. Chor, Y.C. Yeo, “Novel Aluminum Segregation at NiSi/p+-Si Source/Drain Contact for Drive Current Enhancement in P-Channel FinFETs,” IEEE Electron Device Letters 30 (1), pp. 85-87, 2009

  • 29: Tsung-Yang Liow, Kian-Ming Tan, Rinus Tek Po Lee, Ming Zhu, Ben Lian-Huat Tan, N Balasubramanian, Yee-Chia Yeo, “Strained silicon nanowire transistors with germanium source and drain stressors,” IEEE Transactions on Electron Devices 55 (11), pp. 3048-3055, 2008

  • 28: Tsung-Yang Liow, Kian-Ming Tan, Doran Weeks, Rinus Tek Po Lee, Ming Zhu, Keat-Mun Hoe, Chih-Hang Tung, Matthias Bauer, Jennifer Spear, Shawn G Thomas, Ganesh S Samudra, N Balasubramanian, Yee-Chia Yeo, “Strained n-Channel FinFETs Featuring In Situ Doped Silicon–Carbon (Si1−yCy) Source and Drain Stressors With High Carbon Content,” IEEE Transactions on Electron Devices 55 (9), pp. 2475-2483, 2008

  • 27: A.E.J. Lim, R.T.P. Lee, G.S. Samudra, D.L. Kwong, Y.C. Yeo, “Novel rare-earth dielectric interlayers for wide NMOS work-function tunability in Ni-FUSI gates,” IEEE Transactions on Electron Devices 55 (9), pp. 2370-2377, 2008

  • 26: Andy Eu-Jin Lim, Rinus Tek Po Lee, Ganesh S Samudra, Dim-Lee Kwong, Yee-Chia Yeo, “Modification of Molybdenum Gate Electrode Work Function via (La-, Al-Induced) Dipole Effect at High-k/SiO2 Interface,” IEEE Electron Device Letters 29 (8), pp. 848-851, 2008

  • 25: Kian-Ming Tan, Wei-Wei Fang, Mingchu Yang, Tsung-Yang Liow, Rinus T.P. Lee, Narayanan Balasubramanian, Yee-Chia Yeo, “Diamond-like carbon (DLC) liner: A new stressor for p-channel multiple-gate field-effect transistors,” IEEE Electron Device Letters 29 (7), pp. 750-752, 2008

  • 24: Tsung-Yang Liow, Kian-Ming Tan, Rinus T.P. Lee, Ming Zhu, Ben L-H Tan, N Balasubramanian, Yee-Chia Yeo, “Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistors,” IEEE Electron Device Letters 29 (7), pp. 808-810, 2008

  • 23: Alvin Tian-Yi Koh, Rinus Tek-Po Lee, Fang-Yue Liu, Tsung-Yang Liow, Kian Ming Tan, Xincai Wang, Ganesh S Samudra, N Balasubramanian, Dong-Zhi Chi, Yee-Chia Yeo, “Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentration,” IEEE Electron Device Letters 29 (5), pp. 464-467, 2008

  • 22: R.T.P. Lee, K.M. Tan, A.E.J. Lim, T.Y. Liow, G.S. Samudra, D.Z. Chi, Y.C. Yeo, “P-Channel Tri-Gate FinFETs Featuring Ni1−yPty SiGe Source/Drain Contacts for Enhanced Drive Current Performance,” IEEE Electron Device Letters 29 (5), pp. 438-441, 2008

  • 21: A.E.J. Lim, R.T.P. Lee, A.T.Y. Koh, G.S. Samudra, D.L. Kwong, Y.C. Yeo, “Effectiveness of aluminum incorporation in nickel silicide and nickel germanide metal gates for work function reduction,” Japanese Journal of Applied Physics 47 (4S), p. 2383, 2008

  • 20: Kian-Ming Tan, Tsung-Yang Liow, Rinus T.P. Lee, Ming Zhu, Keat-Mun Hoe, Chih-Hang Tung, N Balasubramanian, Ganesh S Samudra, Yee-Chia Yeo, “Novel Extended-Pi Shaped Silicon–Germanium Source/Drain Stressors for Strain and Performance Enhancement in p-Channel Tri-Gate Fin-Type Field-Effect Transistor,” Japanese Journal of Applied Physics 47 (4S), p.2589, 2008

  • 19: Rinus Tek-Po Lee, Tsung-Yang Liow, Kian-Ming Tan, Andy Eu-Jin Lim, Alvin Tian-Yi Koh, Ming Zhu, Guo-Qiang Lo, Ganesh S. Samudra, Dong Zhi Chi, Yee-Chia Yeo, “Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widths,” IEEE Electron Device Letters 29 (4), pp. 382-385, 2008

  • 18: Alvin Tian-Yi Koh, Rinus Tek-Po Lee, Andy Eu-Jin Lim, Doreen Mei-Ying Lai, Dong-Zhi Chi, Keat-Mun Hoe, N. Balasubramanian, Ganesh S. Samudra, Yee-Chia Yeo, “Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors,”  Journal of The Electrochemical Society 155 (3), pp. H151-H155, 2008

  • 17: Kian-Ming Tan, Ming Zhu, Wei-Wei Fang, Mingchu Yang, Tsung-Yang Liow, Rinus T.P. Lee, Keat Mun Hoe, Chih-Hang Tung, Narayanan Balasubramanian, Ganesh S. Samudra, Yee-Chia Yeo, “A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFET,” IEEE Electron Device Letters 29 (2), 192-194, 2008

  • 16: Tsung-Yang Liow, Kian-Ming Tan, Rinus TP Lee, Ming Zhu, Keat-Mun Hoe, Ganesh S Samudra, N Balasubramanian, Yee-Chia Yeo, “Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors,” IEEE Electron Device Letters 29 (1), pp. 80-82, 2008

  • 15: Rinus TP Lee, Li-Tao Yang, Tsung-Yang Liow, Kian-Ming Tan, Andy Eu-Jin Lim, Kah-Wee Ang, Doreen Mei Ying Lai, Keat Mun Hoe, Guo-Qiang Lo, Ganesh S. Samudra, Dong Zhi Chi, Yee-Chia Yeo, “Nickel-silicide: carbon contact technology for n-channel MOSFETs with silicon–carbon source/drain,” IEEE Electron Device Letters 29 (1), pp. 89-92, 2008

  • 14: Tsung-Yang Liow, Kian-Ming Tan, Rinus T.P. Lee, Chih-Hang Tung, Ganesh S. Samudra, N. Balasubramanian, Yee-Chia Yeo, “N-channel (110)-sidewall strained FinFETs with silicon–carbon source and drain stressors and tensile capping layer,” IEEE Electron Device Letters 28 (11), 1014-1017, 2007

     

  • 13: A.E.J. Lim, W.W. Fang, F. Liu, R.T.P. Lee, G. Samudra, D.L. Kwong, Y.C. Yeo, “Impact of interfacial dipole on effective work function of nickel fully silicided gate electrodes formed on rare-earth-based dielectric interlayers,” Applied Physics Letters 91 (17), p172115, 2007

  • 12: Kian-Ming Tan, Tsung-Yang Liow, Rinus TP Lee, Keat Mun Hoe, Chih-Hang Tung, N Balasubramanian, Ganesh S Samudra, Yee-Chia Yeo, “Strained p-Channel FinFETs With Extended Π Shaped Silicon–Germanium Source and Drain Stressors,”  IEEE Electron Device Letters 28 (10), 905-908, 2007

  • 11: D.Z. Chi, R.T.P. Lee, A.S.W. Wong, “Addressing materials and integration issues for NiSi silicide contact metallization in nano-scale CMOS devices,” Thin Solid Films 515 (22), 8102-8108, 2007

  • 10: Rinus Tek-Po Lee, Kian-Ming Tan, Tsung-Yang Liow, Chee-Sheng Ho, S Tripathy, Ganesh S Samudra, Dong-Zhi Chi, Yee-Chia Yeo, “Probing the ErSi1. 7 phase formation by micro-Raman spectroscopy,” Journal of The Electrochemical Society 154 (5), pp. H361-H364, 2007

  • 09: Rinus TP Lee, Andy Eu-Jin Lim, Kian-Ming Tan, Tsung-Yang Liow, Guo-Qiang Lo, Ganesh S Samudra, Dong Zhi Chi, Yee-Chia Yeo, “N-channel FinFETs with 25-nm gate length and Schottky-barrier source and drain featuring ytterbium silicide,” IEEE Electron Device Letters 28 (2), pp. 164-167, 2007

  • 08: A.E.J. Lim, R.T.P. Lee, X.P. Wang, W.S. Hwang, C.H. Tung, G.S. Samudra, D.L. Kwong, Y.C. Yeo, “Yttrium- and Terbium-Based Interlayer on SiO2 and HfO2 Gate Dielectrics for Work Function Modulation of Nickel Fully Silicided Gate in nMOSFET,” IEEE Electron Device Letters 28 (6), pp. 482-485, 2007

  • 07: K.M. Tan, T.Y. Liow, R.T.P. Lee, C.H. Tung, G.S. Samudra, W.J. Yoo, Y.C. Yeo, “Drive-current enhancement in FinFETs using gate-induced stress,” IEEE Electron Device Letters 27 (9), pp. 769-771, 2006

  • 06: S.L. Liew, R.T.P. Lee, K.Y. Lee, B. Balakrisnan, S.Y. Chow, M.Y. Lai, D.Z. Chi, “Enhanced morphological stability of NiGe films formed using Ni (Zr) alloy,” Thin Solid Films 504 (1), pp. 104-107, 2006

  • 05: A.E.J. Lim, R.T.P. Lee, C.H. Tung, S. Tripathy, D.L. Kwong, Y.C. Yeo, “Semiconductor Devices, Materials, and Processing-Full Silicidation of Silicon Gate Electrodes Using Nickel-Terbium Alloy for MOSFET Applications,” Journal of the Electrochemical Society 153 (4), p.G337, 2006

  • 04: R.T.P. Lee, S.L. Liew, W.D. Wang, E.K.C. Chua, S.Y. Chow, M.Y. Lai, D.Z. Chi, “Fully Silicided Ni1− x Pt x Si Metal Gate Electrode for p-MOSFETs,” Electrochemical and Solid-State Letters 8 (7), pp. G156-G159, 2005

  • 03: D.Z. Chi, R.T.P. Lee, S.J. Chua, S.J. Lee, S. Ashok, D.L. Kwong, “Current–voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of Ni Ge∕ n-(001) Ge contact,” Journal of Applied Physics 97 (11), p. 113706, 2005

  • 02: R.T.P. Lee, D.Z. Chi, M.Y. Lai, N.L. Yakovlev, S.J. Chua, “Effects of Ti incorporation in Ni on silicidation reaction and structural/electrical properties of NiSi,” Journal of The Electrochemical Society 151 (9), pp. G642-G647, 2004

  • 01: R.T.P. Lee, D.Z. Chi, S.J. Chua, “Maskless Process for Fabrication of Ultra-Fine Pitch Solder Bumps for Flip Chip Interconnects,” J. Electronic Packaging 125 (4), pp. 597-601, 2003